Institute of Physics, Chinese Academy of Sciences
Institute of Physics, Chinese Academy of Sciences
Nov 10-12, 2012
Pressure driven quantum critical point and f-electron delocalization in CeNiAsO
Zhu’an Xu
Department of Physics, Zhejiang University, Hangzhou 310027, China
We investigated both hydrostatic pressure and chemical pressure (i.e. P-for-As doping) effect on CeNiAsO, an antiferromagnetic dense Kondo lattice. It is found that magnetic ordering of Ce ions is continuously suppressed with increasing pressure, leading to a paramagnetic metal phase above a pressure of 6.5 kbar. Non-Fermi-liquid behavior is observed at this point, accompanied by a "divergent" A coefficient in resistivity and a sign change in the Hall coefficient. Similar phenomena under the chemical pressure are also observed in the P-doped CeNiAs1-xPxO system with the critical doping level xc = 0.4. Ce-4f electron is proposed to delocalize at the quantum critical point (QCP), consistent with the first-principle calculation which also manifests rapidly increased Kondo scale TK with chemical pressure. All these findings reveal CeNiAsO is a new example of Kondo breakdown type of pressure driven QCP.
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Yi-feng Yang, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China. Tel: (86)-10-82649448, (86)-18911600270; Fax: (86)-10-62553698; Email: yifeng@iphy.ac.cn